Organization Overview:
The Center for Functional Nanomaterials (CFN) at Brookhaven is a DOE-funded national scientific user facility, offering users a supported research experience with top-caliber scientists and access to state-of-the- art instrumentation. The CFN mission is advancing nanoscience through frontier fundamental research and technique development and is the nexus of a broad collaboration network. Each year, CFN staff members support the research of nearly 600 external facility users.
Three strategic nanoscience themes underlie the CFN scientific facilities: The CFN conducts research on nanomaterial synthesis by assembly designing precise architectures with targeted functionality by organizing nanoscale components. The CFN researches and applies platforms for state-of-the-art techniques for Accelerated Nanomaterial Discovery, integrating synthesis, advanced characterization, physical modeling, and computer science to iteratively explore a wide range of material parameters. The CFN develops and utilizes advanced capabilities for studies of Nanomaterials in Operando Conditions for characterizing materials and reactions at the atomic scale in real-world environments.
Position Description:
The CFN is seeking a talented Postdoctoral Research Associate to conduct novel research investigating 2D material heterostructures for developing steep-slope transistors for energy-efficient microelectronics applications as a part of a DOE Microelectronics Science and Research Center (MSRC) project. You will explore the materials and device physics of 2D materials and associated heterostructures, such as those based on 2D transition-metal dichalcogenides (TMDCs), and perform nanofabrication and electrical characterization of 2D heterostructure devices using CFN's state-of-the-art Facilities, such as Quantum Materials Press (QPress) and Nanofabrication Facilities, to unravel the influences of atomic defects in 2D materials on the steep-slope device characteristics and performance. This project also aims to investigate the integration of 2D-3D and 2D-membrane semiconductor heterostructures utilizing the materials provided by other external MSRC project team members. You will work under the supervision of Dr. Chang-Yong Nam (Electronic Nanomaterials Group).
Essential Duties and Responsibilities:
You will develop, fabricate, and characterize 2D heterostructures applicable to steep-slope electrical devices based on state-of-the-art 2D materials such as 2D TMDCs and graphene.
You will perform in-depth materials characterization on 2D materials, and electrically characterize the fabricated 2D devices, especially their transistor characteristics, as a function of temperature and the materials characteristics.
You will explore new materials, device structure & physics, and patterning methods for improving the performance of 2D steep-slope devices.
You will perform integration and nanofabrication of 2D-3D and 2D-membrane semiconductor heterostructures using the materials provided by the external MSRC project team members.
You will collaborate with scientific staff with diverse backgrounds including materials science, nanofabrication, and device fabrication and physics.
You will disseminate research findings via paper publications and external presentations.
Required Knowledge, Skills, and Abilities:
You have a Ph.D. in a relevant discipline (Materials Science, Physics, Electrical Engineering, or a related engineering discipline), conferred within the past five years or to be completed prior to the starting date.
You have demonstrated experimental expertise in 2D material heterostructure device fabrication and electrical characterization under various temperatures, including 2D materials mechanical exfoliation/transfer and low-temperature measurements using a cryostat, as well as associated materials and device physics.
You have demonstrated experimental experience in nanofabrication processes (e.g., electron-beam lithography, physical vapor deposition, atomic layer deposition etc.) and electrical device data analysis including transistor characteristics.
You communicate effectively, verbally and in writing, evidenced by peer-reviewed publications and conference presentations/proceedings.
You are committed to creative and independent research, teamwork, and fostering an environment of safe scientific work practices.
You are committed to cultivating an inclusive and respectful workplace environment.
Preferred Knowledge, Skills, and Abilities:
You have hands-on experimental experience with 2D materials and heterostructure fabrication utilizing manual and/or automated 2D materials transfer and stacking systems.
You have hands-on experience in fabricating and electrically characterizing 2D materials devices beyond transistors and basic electrical measurements, such as memristors for neuromorphic computing applications and pulse-based electrical measurements.
You have experience in optimizing 2D materials device performance via engineering materials and device physics, including contact engineering.
You have experience or working knowledge of the synthesis of 2D materials and membrane semiconductors via remote epitaxy.
You have experience in materials characterization and analysis relevant for 2D materials, including but not limited to photoluminescence, Raman scattering, scanning probe microscopy, ultrafast optical spectroscopy, and X-ray photoelectron spectroscopy (XPS).
Other Information:
This is a 2-year Postdoc Assignment.
BNL policy requires that after obtaining a PhD, eligible candidates for research associate appointments may not exceed a combined total of 5 years of relevant work experience as a post- doc and/or in an R&D position, excluding time associated with family planning, military service, illness, or other life-changing events.
Brookhaven National Laboratory is committed to providing fair, equitable and competitive compensation. The full salary range for this position is $71900 - $80000/ year. Salary offers will be commensurate with the final candidate’s qualification, education and experience and considered with the internal peer group.
